Copper conducting wire structure and fabricating method thereof
US8177989B2 · kind B2 · utility
3Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2007 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.