Patent · US Active

Gas sensor and manufacturing method thereof

US8178157B2 · kind B2 · utility

2Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2010
Grant dateMay 15, 2012
Priority date
Expiry dateJul 29, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2291/0257
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A gas sensor and manufacturing method thereof. The gas sensor includes a substrate, a pair of electrodes disposed on the substrate, and a gas sensing thin film covering the electrodes, the gas sensing thin film is made up of carbon nanotubes and tin oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.