Double patterning method
US8178286B2 · kind B2 · utility
1Cited by
26References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2011 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.