Interfacial architecture for nanostructured optoelectronic devices
US8178384B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An optoelectronic apparatus, a method for making the apparatus, and the use of the apparatus in an optoelectronic device are disclosed. The apparatus may include an active layer having a nanostructured network layer with a network of regularly spaced structures with spaces between neighboring structures. One or more network-filling materials are disposed in the spaces. At least one of the network-filling materials has complementary charge transfer properties with respect to the nanostructured network layer. An interfacial layer, configured to enhance an efficiency of the active layer, is disposed between the nanostructured network layer and the network-filling materials. The interfacial layer may be configured to provide (a) charge transfer between the two materials that exhibits different rates for forward versus backward transport; (b) differential light absorption to extend a range of wavelengths that the active layer can absorb; or (c) enhanced light absorption, which may be coupled with charge injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.