Nanofabrication using dip pen nanolithography and metal oxide chemical vapor deposition
US8178429B1 · kind B1 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Nov 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of a semiconductor structure is achieved by using a Dip Pen Nanolithography (DPN) tip to apply a metal catalyst to a prepared substrate. The catalyst is applied in a predetermined pattern, and crystal growth is established at the catalyst site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.