Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
US8178884B2 · kind B2 · utility
105Cited by
22References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 26, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Dec 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.