Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
US8178889B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Jun 19, 2007 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Dec 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On the defect concentrated region 11a, a first electrode 13 is formed. On the semiconductor layer 12, a second electrode 14 is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.