Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film
US8178900B2 · kind B2 · utility
22Cited by
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Key dates
| Filing date | Mar 30, 2006 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, and an insulating film composed of any one of silicon nitride in which the composition ratio of silicon to nitrogen is 0.85 to 3.0, silicon oxide in which the composition ratio of silicon to oxygen is 0.6 to 3.0, or silicon oxide nitride in which the composition ratio of silicon to nitrogen and oxygen is 0.6 to 3.0 that is formed on a surface of the GaN-based semiconductor layer, a gate electrode formed on the GaN-based semiconductor layer, and a source electrode and a drain electrode formed with the gate electrode therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.