Structure to improve MOS transistor on-breakdown voltage
US8178930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2007 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.