Copper wire, method for fabricating the same, and thin film transistor substrate with the same
US8178973B2 · kind B2 · utility
2Cited by
2References
1Claims
0Family size
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Key dates
| Filing date | Dec 12, 2008 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jul 26, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.