Memory device and memory programming method
US8179718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Oct 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.