Absorption modulator and manufacturing method thereof
US8180184B2 · kind B2 · utility
3Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Aug 13, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.