Methods for manufacturing zinc oxide base sputtering target and transparent electrically conductive film
US8182722B2 · kind B2 · utility
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3References
17Claims
0Family size
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Key dates
| Filing date | Nov 18, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using γ-Al2O3 as a dopant material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.