Device with integrated circuit and encapsulated N/MEMS and method for production
US8183078B2 · kind B2 · utility
8Cited by
4References
31Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 3, 2008 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Apr 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.