Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US8183121B2 · kind B2 · utility
6Cited by
25References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | May 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
Abstract
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.