Method for preferential growth of semiconducting vertically aligned single walled carbon nanotubes
US8183164B2 · kind B2 · utility
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Key dates
| Filing date | Jul 29, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | May 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/118
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and system for the preferential growth of semiconducting vertically-aligned single-walled carbon nanotubes (VA-SWNTs) is provided. The method combines the use of plasma-enhanced chemical vapor deposition at low pressure with rapid heating. The method provides a high yield of up to approximately 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating field effect transistor (FET) devices without the need for any post-synthesis purification or separation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.