Image sensor with buried self aligned focusing element
US8183510B2 · kind B2 · utility
46Cited by
14References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Oct 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.