Controlling pit formation in a III-nitride device
US8183577B2 · kind B2 · utility
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2References
13Claims
0Family size
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Key dates
| Filing date | Jun 30, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Jun 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.