Laminar structure on a semiconductor substrate
US8183594B2 · kind B2 · utility
9Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline γ-Al2O film is formed on the silicon substrate which is the lowermost layer of an MFMIS structure. On the monocrystalline γ-Al2O3 film, there is formed an electrically conductive oxide in the form of a LaNiO3 film as a lower electrode. On the LaNiO3 film, there is formed a PZT thin film which is a ferroelectric material. On the PZT thin film, there is formed a Pt film as an upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.