Magnetic tunnel junction having coherent tunneling structure
US8183653B2 · kind B2 · utility
11Cited by
30References
8Claims
0Family size
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Key dates
| Filing date | Jul 13, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3204
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.