Photodiode
US8183656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/407
Abstract
A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.