Field-effect transistor (FET) with embedded diode
US8183658B2 · kind B2 · utility
1Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2008 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Mar 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.