Integrated circuits having interconnects and heat dissipators based on nanostructures
US8183659B2 · kind B2 · utility
4Cited by
14References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2010 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Jul 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/86
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.