Monolithic low impedance dual gate current sense MOSFET
US8183892B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2009 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Nov 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power switch includes a first power transistor having a first source electrode, a first gate electrode, and a first drain electrode, and a second power transistor having a second source electrode, a second gate electrode, and a second drain electrode. The power switch further includes a first pilot transistor has a third source electrode, a third gate electrode, and a third drain electrode. The first, second and third drain electrodes are electrically connected together. The first and second source electrodes are electrically connected together. The first and third gate electrodes are electrically connected together and can be biased independently from the second gate electrode. The first power transistor is the same size as or smaller than the second power transistor and the first power transistor is larger than the first pilot transistor. The first power transistor, the second power transistor, and the first pilot transistor are monolithically integrated in an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.