Patent · US Active

1200° C. film resistor

US8183974B2 · kind B2 · utility

7Cited by

33References

16Claims

0Family size

Assignee

Heraeus Sensor Technology GmbH · DE

Inventors

Karlheinz Wienand · Aschaffenburg, DE
Thomas Loose · Gelnhausen, DE
Margit Sander · Karlstein, DE

Key dates

Filing date	Sep 25, 2008
Grant date	May 22, 2012
Priority date	—
Expiry date	Sep 18, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01C17/06526
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.