Patent · US Active

Card-like memory unit with separate read/write unit

US8184467B2 · kind B2 · utility

4Cited by
10References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 8, 2006
Grant dateMay 22, 2012
Priority date
Expiry dateApr 4, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B9/1454
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.