NAND flash module replacement for DRAM module
US8185685B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Apr 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic memory module according to the invention provides non-volatile memory that can be used in place of a DRAM module without battery backup. An embodiment of the invention includes an embedded microprocessor with microcode that translates the FB-DIMM address and control signals from the system into appropriate address and control signals for NAND flash memory. Wear-leveling, bad block management, garbage collection are preferably implemented by microcode executed by the microprocessor. The microprocessor, additional logic, and embedded memory provides the functions of a flash memory controller. The microprocessor memory preferably contains address mapping tables, free page queue, and garbage collection information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.