Patent · US Active

Strain measuring device

US8186228B2 · kind B2 · utility

0Cited by
13References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 2011
Grant dateMay 29, 2012
Priority date
Expiry dateFeb 10, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L1/2293
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.