Down-stream plasma etching with deflectable radical stream
US8187484B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 5, 2005 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one gas jet (10) is directed from the side to the radical stream (7) which is directed towards the substrate (3). Furthermore the invention relates to an etching chamber for etching of a substrate (3) with a substrate holder (2) and a plasma source (4) remote to the substrate holder (2), which is characterized in that between the substrate holder (2) and the plasma source (4) at least one nozzle (9) for lateral introduction of a gas jet (10) into the etching chamber (1) is provided. With this invention the distribution of the active species on the surface of a substrate can be easily influenced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.