Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices
US8187912B2 · kind B2 · utility
2Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Aug 27, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Sep 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
Abstract
Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.