Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
US8187959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2004 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) making a first amorphous layer in a top layer of the semiconductor substrate by a suitable implant, the first amorphous layer having a first depth, c) implanting a first dopant into the semiconductor substrate to provide the first amorphous layer with a first doping profile, d) applying a first solid phase epitaxial regrowth action to partially regrow the first amorphous layer and form a second amorphous layer having a second depth that is less than the first depth and activate the first dopant, e) implanting a second dopant into the semiconductor substrate to provide the second amorphous layer with a second doping profile with a higher doping concentration than the first doping profile, f) applying a second solid phase epitaxial regrowth action to regrow the second amorphous layer and activate the second dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.