Temperature controlled ion source
US8188448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jan 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.