Resistance variable element
US8188466B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 21, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance variable element is provided, which is capable of performing bipolar operation by a specified mechanism and usable as a memory. The resistance variable element has a laminated structure including an electrode, another electrode, an oxide layer between the electrodes, and an oxide layer in contact with the oxide layer between the oxide layer and the electrode. The oxide layer is switchable from the low-resistance state to the high-resistance state by donating oxygen ions to the oxide layer, and from the high-resistance state to the low-resistance state by accepting oxygen ions from the oxide layer. The oxide layer is switchable from the low-resistance state to the high-resistance state by accepting oxygen ions from the oxide layer, and from the high-resistance state to the low-resistance state by donating oxygen ions to the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.