Semiconductor device and manufacturing method thereof
US8188477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2009 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.