Thin film field effect transistor and display

US8188480B2 · kind B2 · utility

Assignee

• FUJIFILM Corporation · JP

Inventor

• Yuichiro Itai · Yokohama, JP

Key dates

• Filing date: Mar 4, 2009
• Grant date: May 29, 2012
• Expiry date: Jul 25, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode and a drain electrode, wherein a resistance layer containing an amorphous oxide and having a thickness of more than 3 nm is disposed between the active layer and at least one of the source electrode or the drain electrode, and a band gap of the active layer is smaller than a band gap of the resistance layer. Also, a display using the TFT is provided.