Memory device having movable electrode and method of manufacturing the memory device
US8188554B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 10, 2007 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Mar 28, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory device includes a bit line, a first word line, a bit line contact, an electrode, a second word line and a contact tip. The bit line may extend along a first direction. The first word line is formed over the bit line and extends in a second direction. The bit line contact is formed between adjacent first word lines. The bit line contact may have an upper face substantially higher than the first word lines. The electrode contacting with the bit line contact may include an elastic material bending by an electric field among the electrode, the first word line and the second word line. The second word line is disposed over the electrode and corresponds to at least one of the first word lines. The contact tip formed at a lateral portion of the electrode may protrude toward the first and the second word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.