Semiconductor device, its manufacturing method, and sputtering target material for use in the method
US8188599B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2007 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Oct 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device 1 provided on an insulating film 3 with a wiring includes the insulating film 3 containing silicon (Si), a wiring main body 8 formed of copper (Cu) in a groove-like opening 4 disposed in the insulating film 3, and a barrier layer 7 formed between the wiring main body 8 and the insulating film 3 and made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main body 8 side toward the insulating film 3 side, the atomic concentration of Si decreases monotonously from the insulating film 3 side toward the wiring main body 8 side, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.