Solid-state imaging device, method for manufacturing the same and imaging apparatus
US8189083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2009 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.