Patent · US Active

Error detection and correction for external DRAM

US8190974B2 · kind B2 · utility

2Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2009
Grant dateMay 29, 2012
Priority date
Expiry dateDec 4, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F11/1048
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

One embodiment of the present invention sets forth a technique for protecting data with an error correction code (ECC). The data is accessed by a processing unit and stored in an external memory, such as dynamic random access memory (DRAM). Application data and related ECC data are advantageously stored in a common page within a common DRAM device. Application data and ECC data are transmitted between the processor and the external common DRAM device over a common set of input/output (I/O) pins. Eliminating I/O pins and DRAM devices conventionally associated with transmitting and storing ECC data advantageously reduces system complexity and cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.