Low TCR nanocomposite strain gages
US8191426B2 · kind B2 · utility
3Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400° C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.