Tin-doped indium oxide thin films and method for making same
US8192652B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 12, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.