Lithography method
US8192920B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Aug 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2014
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of the invention relate to lithography method useful for patterning at sub-micron resolution. This method comprised of deposition and patterning self-assembled monolayer resists using rolling applicator and rolling mask exposure apparatus. Typically the application of these self-assembled monolayers involves contacting substrate materials with a rotatable applicator in the shape of cylinder or cone wetted with precursor materials. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with self-assembled monolayer. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating mask surface comprises metal nano holes or nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.