Ultrathin spacer formation for carbon-based FET

US8193032B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Zhihong Chen · Syracuse, US
• Dechao Guo · Niskayuna, US
• Shu-Jen Han · Somers, US
• Kai Zhao · Willowbrook, US

Key dates

• Filing date: Jun 29, 2010
• Grant date: Jun 5, 2012
• Expiry date: Oct 19, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6741

Abstract

A method for formation of a carbon-based field effect transistor (FET) includes depositing a first dielectric layer on a carbon layer located on a substrate; forming a gate electrode on the first dielectric layer; etching an exposed portion of the first dielectric layer to expose a portion of the carbon layer; depositing a second dielectric layer over the gate electrode to form a spacer, wherein the second dielectric layer is deposited by atomic layer deposition (ALD), and wherein the second dielectric layer does not form on the exposed portion of the carbon layer; forming source and drain contacts on the carbon layer and forming a gate contact on the gate electrode to form the carbon-based FET.