High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same
US8193043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Sep 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.