Method of manufacturing a semiconductor device
US8193060B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Nov 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
Provided is a method for manufacturing a semiconductor device. A well region formed on a semiconductor substrate includes a plurality of trench regions, and a source electrode is connected to a source region formed on a substrate surface between the trench regions. Adjacently to the source region, a high concentration region is formed, which is brought into butting contact with the source electrode together with the source region, whereby a substrate potential is fixed. A drain region is formed at a bottom portion of the trench region, whose potential is taken to the substrate surface by a drain electrode buried inside the trench region. An arbitrary voltage is applied to a gate electrode, and the drain electrode, whereby carriers flow from the source region to the drain region and the semiconductor device is in an on-state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.