Method for forming silicon trench

US8193095B2 · kind B2 · utility

Assignee

• National Taiwan University · TW

Inventors

• Ching-Fuh Lin · Taipei, TW
• Shih-Che Hung · Tainan, TW
• Shu-Jia Syu · Taipei, TW

Key dates

• Filing date: Feb 11, 2011
• Grant date: Jun 5, 2012
• Expiry date: Feb 12, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/888
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for forming a silicon trench, comprises the steps of: defining an etching area at a silicon substrate; forming metal catalysts at the surface of the etching area; immersing the silicon substrate in a first etching solution thereby forming anisotropic silicon nanostructures in the etching area; immersing the silicon substrate in a second etching solution thereby resulting in the silicon nanostructures being side-etched and detached from the silicon substrate, thus forming the silicon trench.