Nanoelectronic device

US8193524B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mikael T. Bjoerk · Zürich, CH
• Joachim Knoch · Castrop-Rauxel, DE
• Heike E. Riel · Thalwil, CH
• Walter Riess · Thalwil, CH
• Heinz Schmid · Thalwil, CH

Key dates

• Filing date: Sep 22, 2009
• Grant date: Jun 5, 2012
• Expiry date: Dec 4, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/762
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device.