Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
US8193532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2011 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.