Monochromatic light source with high aspect ratio
US8193543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Aug 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
Abstract
Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.