Heterojunction bipolar transistor device with electrostatic discharge ruggedness

US8193609B2 · kind B2 · utility

Assignee

• TriQuint Semiconductor, Inc. · US

Inventors

• Timothy S. Henderson · Richardson, US
• Jeremy R. Middleton · Beaverton, US
• John Hitt · Plano, US

Key dates

• Filing date: May 15, 2008
• Grant date: Jun 5, 2012
• Expiry date: May 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.